近期論文 |
[1]A New Model for the Indentation Depth of a Particle into the Wafer Surface in Chemical Mechanical Polishing Process[J]. International Journal of Comprehensive Engineering Part C: 2012, Aug. 1. (EI) [2]Jiang Jianzhong, Zhao Yongwu, Luo Jianbin. A chemical mechanical polishing model based on the viscous flow of the amorphous layer[J]. Wear , 2008 (265) :992–998. (SCI) [3] 蔣建忠,趙永武,雒建斌. 一種基于非晶層粘性流動的機械化學抛光模型[J]. 中國機械工程, 2006,17( 24):2540-2546. (EI) [4] 蔣建忠,趙永武. 機械化學抛光過程單分子層材料吸附去除機理分析及建模[J]. 哈爾濱工業大學學報, 2006,38. (EI) [5] 蔣建忠,袁曉林.趙永武.CMP過程磨粒壓入芯片表面深度的影響因素分析.中國機械工程. 2011,22(15): 1783-1787. (CSCD核心) [6] 蔣建忠,袁曉林.趙永武. CMP材料去除機制的研究進展. 潤滑與密封.2011, 36(5): 101-105(CSCD) |